Zhenyu Wang Associate Professor

Email: zhenyu-wang@shu.edu.cn

Personal Profile: He has been engaged in the large-scale preparation and characterization of 2D materials for a long time, and explored their applications in the fields of low-power electronic devices, storage-computing integrated architectures, and biomedicine. He has published 15 SCI papers and participated in many international collaborative research projects, and is committed to promoting the technological breakthroughs and industrialization of 2D materials in the new generation of low-power chips and smart sensing technologies.

Research interests: large-scale MOCVD preparation and process optimization of 2D materials, low-power electronic devices and storage-computing integrated architecture design, new 2D material chips and smart sensing technologies, bioelectronic circuits and medical devices, multimodal heterogeneous integration and system-level applications

Educational Background

2015.07-2019.07 B.S. in Materials Science and Engineering, School of Materials, Tsinghua University 2019.08-2024.05 Ph.D. in Materials Science and Engineering, ETH Lausanne, Switzerland

Work Experience

2024.06-2024.10 Postdoctoral Researcher, ETH Lausanne, Switzerland

2025.01-present Associate Professor, Shanghai University

Awards

 Scholarships for Outstanding Privately-Funded International Students, Category A (China National Scholarship Council, 2022) (China Scholarship Council, 2022)

 Outstanding Doctoral Dissertation Award, Institute of Materials, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland (2024)

Representative Achievements

(1) Wang, Z.; Tripathi, M.; Golsanamlou, Z.; Kumari, P.; Lovarelli, G.; Mazziotti, F.; Logoteta, D.; Fiori, G.; Sementa, L.; Marega, G. M.; Ji, H. G.; Zhao, Y.; Radenovic, A.; Iannaccone, G.; Fortunelli, A.; Kis, A. Substitutional P-Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD. Adv. Mater. 2023, 35 (14), 2209371.

(2) Wang, Z.; Cheon, C.-Y.; Tripathi, M.; Marega, G. M.; Zhao, Y.; Ji, H. G.; Macha, M.; Radenovic, A.; Kis, A. Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition. ACS Nano 2021, 15 (11), 18403–18410.

(3) Migliato Marega, G.; Wang, Z.; Paliy, M.; Giusi, G.; Strangio, S.; Castiglione, F.; Callegari, C.; Tripathi, M.; Radenovic, A.; Iannaccone, G.; Kis, A. Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2. ACS Nano 2022, 16 (3), 3684–3694.

(4) Migliato Marega, G.; Ji, H. G.; Wang, Z.; Pasquale, G.; Tripathi, M.; Radenovic, A.; Kis, A. A Large-Scale Integrated Vector–Matrix Multiplication Processor Based on Monolayer Molybdenum Disulfide Memories. Nat. Electron. 2023, 6 (12), 991–998.

(5) Migliato Marega, G.; Zhao, Y.; Avsar, A.; Wang, Z.; Tripathi, M.; Radenovic, A.; Kis, A. Logic-in-Memory Based on an Atomically Thin Semiconductor. Nature 2020, 587 (7832), 72–77.

(6) Zhao, Y.; Tripathi, M.; Čerņevičs, K.; Avsar, A.; Ji, H. G.; Gonzalez Marin, J. F.; Cheon, C.-Y.; Wang, Z.; Yazyev, O. V.; Kis, A. Electrical Spectroscopy of Defect States and Their Hybridization in Monolayer MoS2. Nat. Commun. 2023, 14 (1), 44.

(7) Zhang, M.; Lihter, M.; Chen, T.-H.; Macha, M.; Rayabharam, A.; Banjac, K.; Zhao, Y.; Wang, Z.; Zhang, J.; Comtet, J.; Aluru, N. R.; Lingenfelder, M.; Kis, A.; Radenovic, A. Super-Resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides. ACS Nano 2021, 15 (4), 7168–7178.

(8) Reato, E.; Palacios, P.; Uzlu, B.; Saeed, M.; Grundmann, A.; Wang, Z.; Schneider, D. S.; Wang, Z.; Heuken, M.; Kalisch, H.; Vescan, A.; Radenovic, A.; Kis, A.; Neumaier, D.; Negra, R.; Lemme, M. C. Zero-Bias Power-Detector Circuits Based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates. Adv. Mater. 2022, 34 (48), 2108469.

(9) Qiu, H.; Yu, Z.; Zhao, T.; Zhang, Q.; Xu, M.; Li, P.; Li, T.; Bao, W.; Chai, Y.; Chen, S.; Chen, Y.; Cheng, H.-M.; Dai, D.; Di, Z.; Dong, Z.; Duan, X.; Feng, Y.; Fu, Y.; Guo, J.; Guo, P.; Hao, Y.; He, J.; He, X.; Hu, J.; Hu, W.; Hu, Z.; Huang, X.; Huang, Z.; Imran, A.; Kong, Z.; Li, J.; Li, Q.; Li, W.; Liao, L.; Liu, B.; Liu, C.; Liu, C.; Liu, G.; Liu, K.; Liu, L.; Liu, S.; Liu, Y.; Lu, D.; Ma, L.; Miao, F.; Ni, Z.; Ning, J.; Pan, A.; Ren, T.-L.; Shu, H.; Sun, L.; Sun, Y.; Tao, Q.; Tian, Z.-A.; Wang, D.; Wang, H.; Wang, H.; Wang, J.; Wang, J.; Wang, W.; Wang, X.; Wang, Y.; Wang, Y.; Wang, Z.; Wen, Y.; Wu, H.; Wu, H.; Wu, J.; Wu, Y.; Xia, L.; Xiang, B.; Xing, L.; Xiong, Q.; Xiong, X.; Xu, J.; Xu, T.; Xu, Y.; Yang, L.; Yang, Y.; Yang, Y.; Ye, L.; Ye, Y.; Yu, B.; Yu, T.; Zeng, H.; Zhang, G.; Zhang, H.; Zhang, J.; Zhang, K.; Zhang, T.; Zhang, X.; Zhang, Y.; Zhao, C.; Zhao, Y.; Zheng, T.; Zhou, P.; Zhou, S.; Zhu, Y.; Yang, D.; Shi, Y.; Wang, H.; Wang, X. Two-Dimensional Materials for Future Information Technology: Status and Prospects. Sci. China Inf. Sci. 2024, 67 (6), 160400.

(10) Piacentini, A.; Marian, D.; Schneider, D. S.; González Marín, E.; Wang, Z.; Otto, M.; Canto, B.; Radenovic, A.; Kis, A.; Fiori, G.; Lemme, M. C.; Neumaier, D. Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN. Adv. Electron. Mater. 2022, 8 (9), 2200123.

(11) Erbas, B.; Conde-Rubio, A.; Liu, X.; Pernollet, J.; Wang, Z.; Bertsch, A.; Penedo, M.; Fantner, G.; Banerjee, M.; Kis, A.; Boero, G.; Brugger, J. Combining Thermal Scanning Probe Lithography and Dry Etching for Grayscale Nanopattern Amplification. Microsyst. Nanoeng. 2024, 10 (1), 1–10.

(12) Schneider, D. S.; Lucchesi, L.; Reato, E.; Wang, Z.; Piacentini, A.; Bolten, J.; Marian, D.; Marin, E. G.; Radenovic, A.; Wang, Z.; Fiori, G.; Kis, A.; Iannaccone, G.; Neumaier, D.; Lemme, M. C. CVD Graphene Contacts for Lateral Heterostructure MoS2 Field Effect Transistors. Npj 2D Mater. Appl. 2024, 8 (1), 1–6.

(13) Schneider, D. S.; Reato, E.; Lucchesi, L.; Wang, Z.; Piacetini, A.; Bolten, J.; Marian, D.; Marin, E. G.; Radenovic, A.; Wang, Z.; Fiori, G.; Kis, A.; Iannaccone, G.; Neumaier, D.; Lemme, M. C. MoS2/Graphene Lateral Heterostructure Field Effect Transistors. In 2021 Device Research Conference (DRC); 2021; pp 1–2.